Evaluation of a novel fluorine free copper (I) precursor for Cu CVD

A novel volatile fluorine free copper (I) precursor, (2-methyl-3,5-hexandionate)Cu(I)(bis(trimethylsilyl)acetylene), [(mhd)Cu(BTMSA)], has been synthesized by acid-base reaction and characterized. This liquid complex (mp = 13–15 °C) is quite thermally stable. Using [(mhd)Cu(BTMSA)] for copper CVD, adhesive, continuous and pure copper metallic thin films (< 1% impurity as seen by XPS) were grown on Ta/TaN/SiO2/Si substrates with an optimized growth rate of 100 nm min− 1 in the temperature interval of 175–300 °C.