Effects of Cu and Cu/Ti interlayer on adhesion of diamond film

Diamond film were deposited on the cemented WC + 6% Co substrates by a microwave plasma chemical vapor deposition (CVD) system. The effects of Cu and Cu/Ti as interlayer on adhesion of diamond film were investigated. The surface morphology and composition of the film and microstructure of film/substrate interface were examined by scanning electron microscopy (SEM), X-ray diffraction (XRD), electron probe microanalysis (EPMA) and Raman spectrometer, respectively. The adhesion of diamond film was evaluated by indentation adhesion testing. The results show that Cu/Ti would be a suitable interlayer system to improve film adhesion. It was considered that Cu atoms replaced most voids left by leached Co, recovered the surface strength and toughness, and inhibited the diffusion of Co to the substrate surface. Ti atoms act as promoter for diamond nucleation, and the formation of TiC enhanced the adhesion of diamond film. Furthermore, Cu/Ti interlayer system restrained the growth of diamond grain and promoted the formation of nano-crystalline, which increased the contact area of the film/substrate interface.