کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1662681 | 1517708 | 2006 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Plasma surface modification of polyimide films by air glow discharge for copper metallization on microelectronic flex substrates
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Plasma surface modification of polyimide films by air glow discharge for copper metallization on microelectronic flex substrates Plasma surface modification of polyimide films by air glow discharge for copper metallization on microelectronic flex substrates](/preview/png/1662681.png)
چکیده انگلیسی
Surface modification of polyimide films such as Kapton E(N) and Upilex S by air plasmas were investigated for enhanced adhesive strength with sputtered coppers. Peel tests demonstrate this improvement, with the peel strengths of 0.7 g/mm and 1.2 g/mm for unmodified Kapton E(N) and Upilex S and 99.3 g/mm and 91.5 g/mm for air plasma-modified Kapton E(N) and Upilex S at certain plasma conditions. This study reported that the enhanced adhesive strengths of polyimide films with sputtered coppers by air plasmas were strongly affected by the surface characteristics such as surface morphology and surface energy of polyimide films. Atomic force microscopy (AFM) and sessile drop method indicated the surface roughness and the surface energy of polyimide films were much increased by air plasmas that result in much increased peel strengths of polyimide films with sputtered coppers. Electron spectroscopy for chemical analysis (ESCA) observed the increased surface energy on polyimide films by air plasmas were due to the increased surface composition of O and the increased chemical bond of C-O.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 200, Issues 12â13, 31 March 2006, Pages 3775-3785
Journal: Surface and Coatings Technology - Volume 200, Issues 12â13, 31 March 2006, Pages 3775-3785
نویسندگان
Y.-S. Lin, H.-M. Liu, C.-L. Chen,