کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1662989 1517697 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Systematics of the giant isotope effect in hydrogen ion blistering of materials
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Systematics of the giant isotope effect in hydrogen ion blistering of materials
چکیده انگلیسی
The giant isotope effect, observed when D ions were substituted for H ions in low energy blistering of silicon, challenged common assumptions based on ion irradiation theory and H-Si chemistry. We report a systematic investigation of the effect in several materials, in an attempt to identify its origin. Samples of Si, Ge, GaAs, 6H-SiC and SrTiO3 (STO) were implanted at 5 keV with various H or D doses (1 × 1016 to 2 × 1017 cm− 2) and rapid thermal annealed. The resulting surface morphology was examined by atomic force microscopy. On Si and GaAs, D-ion blistering requires 2 to 3 times higher doses than H-ion blistering. On SiC, no D-ion blistering whatsoever is observed. On the other hand, on Ge and STO, there is little difference between H and D-induced blistering. For Si, Raman spectroscopy of Si-H/D bonding in conjunction with lattice kinetic Monte-Carlo calculations led to an interpretation of the effect in terms of reactions between the mobile entities, i.e. H (or D) atoms, vacancies and interstitials. The new data will be discussed by reference to this scenario.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 201, Issues 19–20, 5 August 2007, Pages 8205-8209
نویسندگان
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