کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1663002 1517697 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Improvement in crystal quality of epitaxial Ag and Cu films induced by self-ion irradiation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Improvement in crystal quality of epitaxial Ag and Cu films induced by self-ion irradiation
چکیده انگلیسی
Epitaxial Ag and Cu films ∼ 300 nm thick on Si substrates were irradiated with self-ions (Ag+ and Cu+) at room temperature to improve crystal quality of the films. The minimum yield of Ag/Si(100) for [100] axial channeling, for example, was reduced from 39% of that for the un-irradiated sample to 13% after irradiation with 300 keV Ag ions to a fluence of 3 × 1015 ions cm− 2. The self-ion irradiation uniformly improves the crystal quality of the irradiated layer up to a depth of ∼ 200 nm, rather close to the depth corresponding to the end of range of ions, in spite of the non-uniform depth distribution of displaced Ag atoms. In channeling analysis, the energy dependences of dechanneling factors show that dominant defects present in the irradiated films are not dislocations, but twins, stacking faults and/or voids. AFM observations evidence grain growth in a lateral direction at the surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 201, Issues 19–20, 5 August 2007, Pages 8273-8277
نویسندگان
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