Preparation and characterization of non-evaporable porous Ti–Zr–V getter films

Highly porous TiZrV film getters on (100) silicon substrates have been successfully grown by the glancing angle dc magnetron sputtering method. The glancing angle is defined as the angle between the surface normal to the substrate and the surface normal to the target. The main deposition parameters that produce the porous TiZrV films are the pressure of sputtering gas Ar and glancing angle at room temperature. The larger the glancing angle is, the higher the porosity and specific surface area of the TiZrV films are. The specific surface area of the dense and porous TiZrV films is 2 m2/g and 13 m2/g, respectively. The diameter of columnar width and inter-distance between the columnar crystals of the porous film are 200 nm and 50 nm, respectively. The columnar width of dense TiZrV films is about 100 nm. The porous TiZrV films have a larger capability to absorb oxygen than that of the dense TiZrV films.