Modelling of AlAs/GaAs interfacial structures using high-angle annular dark field (HAADF) image simulations

► HAADF image simulations were performed on AlAs/GaAs interfacial models. ► Perfect, vicinal/sawtooth and diffusion models were considered. ► Interfacial sharpness as a function of thickness was compared to experiment. ► Interfacial sharpness changes in a complicated manner with thickness. ► The Moison diffusion model gave the closest match to experiment.