کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1677581 1518346 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Defect analysis by statistical fitting to 3D atomicmaps
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Defect analysis by statistical fitting to 3D atomicmaps
چکیده انگلیسی

In this article we present a statistical fitting method for evaluation of atomic reconstructions which does not require a coarse-graining step. The fitting compares different models of chemical structure in their capability to explain the measured data set by a least square type merit function. Only preliminary qualitative assumptions about the possible chemical structure are required, while accurate quantitative parameters of the chosen model are delivered by fitting. The technique is particularly useful for singular defect structures with very high composition gradients, for which iso-concentration surfaces determined by coarse-graining become questionable or impossible. We demonstrate that particularly detailed information can be gained from triple junctions and grain boundaries.


► Direct fitting to 3D atomic distributions is proposed.
► Quantitative data is gained from small object with high composition gradients.
► Fitting is especially suitable for studying transport properties of defects.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 132, September 2013, Pages 86–91
نویسندگان
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