کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1677594 1518346 2013 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analysis of implanted silicon dopant profiles
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Analysis of implanted silicon dopant profiles
چکیده انگلیسی

Atom probe tomography implant dose measurements are reported for National Institute of Standards and Technology Standard Reference Material 2134 (arsenic implant). Efforts were taken to manufacture specimens with limited variation in size and shape to minimize variation in physical reconstruction parameters. A tip profile reconstruction was utilized where measurements of tip profile, post-analysis specimen radius and sphere-to-cone radius ratio were required as inputs into the reconstruction process. A variation of 4% is observed in the dose measurement under these conditions. Various considerations necessary to narrow the observed variation in measured dose, toward the limit imposed by counting statistics, are discussed.


► Multiple APT measurements were made on a NIST standard reference implant material.
► Accuracy and precision of APT was assessed on implant dose measurements.
► Dose standard deviations of ∼2% (∼2× counting statistics limit) were achieved.
► SEM exposure was found to affect the ability to successfully analyze these specimens.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 132, September 2013, Pages 179–185
نویسندگان
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