کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1677816 1009910 2010 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
On the lateral resolution of scanning capacitance microscope based C-V measurements
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
On the lateral resolution of scanning capacitance microscope based C-V measurements
چکیده انگلیسی
The stray capacitance increases the dC/dV dependence and affects its relation to dopant concentration. The error is negligible at low doping levels but may attain the multiple of the value expected on high-doped materials. The stray field of a tip-on-cantilever probe is orders of magnitude larger than that of a pointed thin wire perpendicular to the surface. It has unexpected consequences-the local sensitivity achieved with the cantilever is less affected by the radius of curvature on the one hand and the calibration accuracy of the wire probe is less sensitive to the pitch of test structure used, on the other.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 110, Issue 10, September 2010, Pages 1343-1348
نویسندگان
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