کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1677977 1009924 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of analysis direction on the measurement of interfacial mixing in thin metal layers with atom probe tomography
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Effect of analysis direction on the measurement of interfacial mixing in thin metal layers with atom probe tomography
چکیده انگلیسی

The accuracy and precision of thin-film interfacial mixing as measured with atom probe tomography (APT) are assessed by considering experimental and simulated field-evaporation of a Co/Cu/Co multilayer structure. Reconstructions were performed using constant shank angle and Z-scale reordering algorithms. Reconstruction of simulated data (zero intermixing) results in a 10–90% intermixing width of ∼0.2 nm while experiential intermixing (measured from multiple runs) was 0.47±0.19 and 0.49±0.10 nm for Co-on-Cu and Cu-on-Co interfaces, respectively. The experimental data were collected in analysis orientations both parallel and anti-parallel to film growth direction and the impact of this on the interfacial mixing measurements is discussed. It is proposed that the resolution of such APT measurements is limited by the combination of specimen shape and reconstruction algorithms rather than by an inherent instrumentation limit.

Research highlights
► The accuracy of thin-film interfacial mixing as measured with atom probe tomography is assessed.
► Reconstructions were performed using constant shank angle and Z-scale reordering algorithms.
► The 10–90% simulated intermixing width was ∼0.2 nm while experiential intermixing was ∼0.5 nm.
► Measurements appear to be limited by a combination of specimen shape and reconstruction algorithms.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 111, Issue 6, May 2011, Pages 506–511
نویسندگان
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