Atom probe analysis of a 3D finFET with high-k metal gate

The atom probe analysis of a full gate stack (metal gate/high-k dielectric) in a 3D finFET is reported. The measurement reliability in this kind of heterogeneous structure is discussed in the light of different artefacts, i.e. mass overlap and 3D reconstruction artefacts.

Research highlights
► Analysis of high-k metal gate finfet using atom probe.
► Investigations of the influence of laser wavelength/laser power in assessing reliable concentration.
► Description/interpretation of the 3D reconstruction artefacts based on the field evaporation properties of the different analysed phases.