کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1678178 | 1009931 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Field-induced cathodic oxidation of low-energy Ar-ion-bombarded silicon by AFM
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Field-induced cathodic oxidation of low-energy Ar-ion-bombarded silicon by AFM Field-induced cathodic oxidation of low-energy Ar-ion-bombarded silicon by AFM](/preview/png/1678178.png)
چکیده انگلیسی
Local oxidation by atomic force microscopy (AFM) was studied on a 3 keV Argon (Ar)-ion-bombarded silicon (Si) (1 0 0) substrate. Giant oxide features higher than 100 nm were patterned by applying positive voltages to the tip with respect to the substrate. To analyze the growth rate of oxide features, we used the power-of-time law model. The growth rate of oxide features on an Ar-ion beam-bombarded silicon surface was increased approximately 1.8-fold compared to a common silicon surface. Furthermore, we obtained that the heights of oxide features increased as the exposure time to the tip decreased and the scan area increased.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 109, Issue 8, July 2009, Pages 1085–1088
Journal: Ultramicroscopy - Volume 109, Issue 8, July 2009, Pages 1085–1088
نویسندگان
Hyunsook Kim, Sung-Kyoung Kim, Kye-Ryung Kim, Haiwon Lee,