کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1678358 1009940 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
In situ measurements and transmission electron microscopy of carbon nanotube field-effect transistors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
In situ measurements and transmission electron microscopy of carbon nanotube field-effect transistors
چکیده انگلیسی

We present the design and operation of a transmission electron microscopy (TEM)-compatible carbon nanotube (CNT) field-effect transistor (FET). The device is configured with microfabricated slits, which allows direct observation of CNTs in a FET using TEM and measurement of electrical transport while inside the TEM. As demonstrations of the device architecture, two examples are presented. The first example is an in situ electrical transport measurement of a bundle of carbon nanotubes. The second example is a study of electron beam radiation effect on CNT bundles using a 200 keV electron beam. In situ electrical transport measurement during the beam irradiation shows a signature of wall- or tube-breakdown. Stepwise current drops were observed when a high intensity electron beam was used to cut individual CNT bundles in a device with multiple bundles.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 108, Issue 7, June 2008, Pages 613–618
نویسندگان
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