کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1678757 | 1009960 | 2009 | 9 صفحه PDF | دانلود رایگان |
A new approach to automatic TEM‐based orientation microscopy is presented, which is based on a combination of the techniques of dark-field conical scanning and improved image matching, and a diffraction pattern simulation method. For indexing, a full experimental diffraction pattern is compared to all possible pre-calculated diffraction patterns for the given structure by image matching. In order to speed up this relatively calculation-intensive algorithm, polar transformation and, most important, circular projection that increase the speed of pattern indexing by a factor of about 50 are proposed. A microstructure of submicron scale and crystallographic orientations in nanocrystalline materials are measured successfully. It is proposed that the taken approach of dark-field conical scanning and improved image matching may be, in principle, better suited for TEM-based orientation microscopy than serial orientation mapping.
Journal: Ultramicroscopy - Volume 109, Issue 11, October 2009, Pages 1317–1325