کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1678891 | 1009975 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Some aspects of the silicon behaviour under femtosecond pulsed laser field evaporation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Some aspects of the silicon behaviour under femtosecond pulsed laser field evaporation Some aspects of the silicon behaviour under femtosecond pulsed laser field evaporation](/preview/png/1678891.png)
چکیده انگلیسی
Three dimension atom probe analysis of semiconductor materials requires the ability to bring high electric field at the specimen apex to remove atoms. It is shown that, if voltage pulses are used to evaporate doped silicon, the resistivity of the material has to be lower than about 102 Ω cm. To overcome this problem, voltage pulses have been replaced by femtosecond laser pulses. The laser pulses give rise to field evaporation by two processes. Both thermal and optical field evaporation have been observed. Thermal evaporation takes place at high laser intensities and with short wavelengths while the evaporation is assisted by the rectification of the optical field for lower intensities and in the infrared domain. Using the optical field evaporation, reproducible and good analyses in term of spatial and mass resolutions could be conducted.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 107, Issue 9, September 2007, Pages 767-772
Journal: Ultramicroscopy - Volume 107, Issue 9, September 2007, Pages 767-772
نویسندگان
M. Gilbert, F. Vurpillot, A. Vella, H. Bernas, B. Deconihout,