کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1679018 1009988 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Quantitative current measurements using scanning magnetoresistance microscopy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Quantitative current measurements using scanning magnetoresistance microscopy
چکیده انگلیسی

We have demonstrated the capability of scanning magnetoresistance microscope (SMRM) to be used for quantitative current measurements. The SMRM is a magnetic microscope that is based on an atomic force microscope (AFM) and simultaneously measures the localized surface magnetic field distribution and surface topography. The proposed SMRM employs an in-house built AFM cantilever equipped with a miniaturized magnetoresistive (MR) sensor as a magnetic field sensor. In this study, a spin-valve type MR sensor with a width of 1μm was used to measure the magnetic field distribution induced by a current carrying wire with a width of 5μm and a spacing of 1.6μm at room temperature and under ambient conditions. Simultaneous imaging of the magnetic field distribution and the topography was successfully performed in the DC current ranging from 500μA to 8 mA. The characterized SV sensor, which has a linear response to magnetic fields, offers the quantitative analysis of a magnetic field and current. The measured magnetic field strength was in good agreement with the result simulated using Biot–Savart's law.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 108, Issue 9, August 2008, Pages 970–974
نویسندگان
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