کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1679085 | 1009997 | 2006 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Determination of the mean inner potential in III–V semiconductors, Si and Ge by density functional theory and electron holography
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The mean inner potentials of various III–V semiconductors, Si and Ge have been calculated by density functional theory methods. For that purpose, the Coulomb potential of slabs consisting of a crystal and vacuum region has been computed and averaged inside the crystal region. The computed values are in agreement with experimental values obtained by electron holography for Si and GaAs. For the other semiconductors, the deviations are smaller than 0.8 V. The results from density functional theory are approximately 10% smaller than the values derived from atomic scattering factors computed by Hartree Fock calculations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 106, Issue 2, January 2006, Pages 105–113
Journal: Ultramicroscopy - Volume 106, Issue 2, January 2006, Pages 105–113
نویسندگان
P. Kruse, M. Schowalter, D. Lamoen, A. Rosenauer, D. Gerthsen,