کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1679888 1518663 2015 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural damage in InGaN induced by MeV heavy ion irradiation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Structural damage in InGaN induced by MeV heavy ion irradiation
چکیده انگلیسی

In0.18Ga0.82N films were irradiated with 4 MeV 84Kr and 8.9 MeV 209Bi ions to various fluences at room temperature. The irradiated films were analyzed by means of Rutherford backscattering/channeling (RBS/C) and high resolution X-ray diffraction (HRXRD). The RBS/C measurements show that under the irradiation conditions, the relative lattice disorder in the films, obtained from the normalized backscattering yield, exhibits a rapid increase in the range from ∼2% to 68%. There is also an increasing lattice expansion of the films with increasing ion fluence, as determined by the HRXRD measurements. At a comparable level of lattice disorder, the Kr irradiation leads to a more pronounced lattice expansion than the Bi irradiation. This may be attributed to a larger portion of the single interstitials in the films produced by the lighter Kr ion irradiation.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volumes 356–357, 1 August 2015, Pages 53–56
نویسندگان
, , , , , ,