کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1679896 | 1518663 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Graphene synthesis on SiC: Reduced graphitization temperature by C-cluster and Ar-ion implantation
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Thermal decomposition of SiC is a promising method for high quality production of wafer-scale graphene layers, when the high decomposition temperature of SiC is substantially reduced. The high decomposition temperature of SiC around 1400 °C is a technical obstacle. In this work, we report on graphene synthesis on 6H-SiC with reduced graphitization temperature via ion implantation. When energetic Ar, C1 and C6-cluster ions implanted into 6H-SiC substrates, some of the Si-C bonds have been broken due to the electronic and nuclear collisions. Owing to the radiation damage induced bond breaking and the implanted C atoms as an additional C source the graphitization temperature was reduced by up to 200 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volumes 356â357, 1 August 2015, Pages 99-102
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volumes 356â357, 1 August 2015, Pages 99-102
نویسندگان
R. Zhang, H. Li, Z.D. Zhang, Z.S. Wang, S.Y. Zhou, Z. Wang, T.C. Li, J.R. Liu, D.J. Fu,