کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1680498 1518667 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Combined binary collision and continuum mechanics model applied to focused ion beam milling of a silicon membrane
ترجمه فارسی عنوان
تصادف دوتایی ترکیبی و مدل مکانیک پیوسته برای تراکم پرتوهای یونی یک غشای سیلیکونی اعمال شده است
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
چکیده انگلیسی

Many experiments indicate the importance of stress and stress relaxation upon ion implantation. In this paper, a model is proposed that is capable of describing ballistic effects as well as stress relaxation by viscous flow. It combines atomistic binary collision simulation with continuum mechanics. The only parameters that enter the continuum model are the bulk modulus and the radiation-induced viscosity. The shear modulus can also be considered but shows only minor effects. A boundary-fitted grid is proposed that is usable both during the binary collision simulation and for the spatial discretization of the force balance equations. As an application, the milling of a slit into an amorphous silicon membrane with a 30 keV focused Ga beam is studied, which demonstrates the relevance of the new model compared to a more heuristic approach used in previous work.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 352, 1 June 2015, Pages 22–26
نویسندگان
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