کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1680796 | 1518679 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Subsurface and interface channeling of keV ions in graphene/SiC
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Subsurface and interface channeling of keV ions in graphene/SiC Subsurface and interface channeling of keV ions in graphene/SiC](/preview/png/1680796.png)
چکیده انگلیسی
Using molecular-dynamics simulation, we study the impact of 3 keV Ar and Xe ions on a β-SiC (1 1 1) surface covered by a single graphene layer. At glancing ion incidence angles, we observe the ions to undergo interface channeling between the graphene and the first SiC surface layer. This behavior is particularly pronounced for Xe ions, where at incidence angles of 70–75° more than 50% of the ions are channeled. This process is accompanied by abundant damage production and sputtering in the graphene layer. Similarities and differences to subsurface channeling in elemental materials are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 340, 1 December 2014, Pages 5–10
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 340, 1 December 2014, Pages 5–10
نویسندگان
Yudi Rosandi, Herbert M. Urbassek,