FIB fabrication and irradiation test of stencil masks for heavy-ion patterned implantation for plasmonic application

Using focused ion beam (FIB) milling, SOI wafer with heavily doped p-type Si (1 0 0) membrane was fabricated into stencil mask used for patterned heavy ion implantation. Because of the high electrical conductivity, high thermal conductivity and crystalline orientation of Si membrane, the mask can greatly decrease the thermal spike damage and the ionization discharge damage induced by heavy ion irradiation, keeping dimensional stability. Effective patterned implantation with ion energy of 60 keV can be achieved under the fluence below 2 × 1017 ions/cm2. The patterned metallic implanted c-SiO2 shows enhanced surface plasmon resonance and pronounced nonlinear optical property.