کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1680995 | 1518698 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Residual defects in low-dose arsenic-implanted silicon after high-temperature annealing
ترجمه فارسی عنوان
نقص های باقی مانده در سیلیکون آرسنیک با دوز کم پس از خنک شدن دمای بالا
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
چکیده انگلیسی
We investigated the residual defects in low-dose (1013 cm−2) arsenic implanted Si after high-temperature (1100 °C) annealing. The presence of residual damage was successfully revealed after using a rapid thermal process for heat treatment. This damage was identified as vacancy-type defects distributed near the surface, such as tetravacancies or pentavacancies. When O2 gas was introduced to the annealing chamber, vacancy-type defects were transformed into divacancy and carbon–oxygen complex. They were confirmed to be created by a non-equilibrium reaction during the rapid cooling-down step in the annealing sequence.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 321, 15 February 2014, Pages 54–58
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 321, 15 February 2014, Pages 54–58
نویسندگان
Akihiko Sagara, Miori Hiraiwa, Akira Uedono, Nagayasu Oshima, Ryoichi Suzuki, Satoshi Shibata,