کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1680995 1518698 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Residual defects in low-dose arsenic-implanted silicon after high-temperature annealing
ترجمه فارسی عنوان
نقص های باقی مانده در سیلیکون آرسنیک با دوز کم پس از خنک شدن دمای بالا
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
چکیده انگلیسی

We investigated the residual defects in low-dose (1013 cm−2) arsenic implanted Si after high-temperature (1100 °C) annealing. The presence of residual damage was successfully revealed after using a rapid thermal process for heat treatment. This damage was identified as vacancy-type defects distributed near the surface, such as tetravacancies or pentavacancies. When O2 gas was introduced to the annealing chamber, vacancy-type defects were transformed into divacancy and carbon–oxygen complex. They were confirmed to be created by a non-equilibrium reaction during the rapid cooling-down step in the annealing sequence.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 321, 15 February 2014, Pages 54–58
نویسندگان
, , , , , ,