کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1681130 | 1518688 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dislocation density and tetragonal distortion of a GaN epilayer on Si (1 1 1): A comparative RBS/C and TEM study
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Rutherford backscattering and channeling spectrometry (RBS/C) as well as transmission electron microscopy (TEM) are used to characterize the crystalline structure of a GaN layer grown on a Si (1 1 1) substrate. The channeling measurements are performed along the off-normal 〈12¯13〉 axis in the {101¯0} plane of the GaN layer. The threading edge dislocation defect density obtained from RBS/C is quantitatively compared to the results obtained from TEM. The strain is found not to be completely relaxed, eT ≠ 0, in spite of the large thickness of the GaN layer (3.0 μm), and in spite of the incorporation of various buffer layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 331, 15 July 2014, Pages 69–73
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 331, 15 July 2014, Pages 69–73
نویسندگان
H. Lenka, J. Meersschaut, P.K. Kandaswamy, H. Modarresi, H. Bender, A. Vantomme, W. Vandervorst,