Effects of excess oxygen on the 4.5-6.3Â eV absorption spectra of oxygen-rich high purity silica

Type III silica samples were implanted with O using a multi-energy process that produced a layer of constant concentration to within ±5% beginning ∼80 nm from the surface and extending to ∼640 nm below the surfaces of the samples. The concentrations of excess oxygen in the layer ranged from 0.035 to ∼2.1at.%. In these samples we show that E′ centers and NBOHCs, as well as the normal cadre of ODC (II) centers, were suppressed, and the optical absorption from 4.7 to 6.4 eV was primarily due to oxygen excess defects. Using Gaussian fitting techniques to examine the optical difference spectra, we have been able to identify four defect centers that are related to excess oxygen defect bands at 4.76 eV, 5.42 eV, 5.75 eV and 6.25 eV.