کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1681314 1518694 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Geant4 physics processes for silicon microdosimetry simulation: Improvements and extension of the energy-range validity up to 10 GeV/nucleon
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Geant4 physics processes for silicon microdosimetry simulation: Improvements and extension of the energy-range validity up to 10 GeV/nucleon
چکیده انگلیسی

Various corrections are added to the MicroElec extension in Geant4, for both incident electrons and protons, in order to extend the energy-range validity of the models. Additional modifications are also made to ease the use in compliance with other Geant4 models. The models are now valid for incident electrons of energy 16.7 eV to 100 MeV and incident protons and heavy ions of energy 50 keV/nucleon up to 10 GeV/nucleon.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 325, 15 April 2014, Pages 97–100
نویسندگان
, , ,