کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1681362 | 1010437 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High temperature annealing of Europium implanted AlN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
AlN was implanted with 300 keV Eu ions within a wide fluence range from 4 Ã 1014 to 1.4 Ã 1017 at/cm2. The damage build-up was investigated by Rutherford Backscattering/Channelling. Sigmoidal shaped damage build-up curves indicate efficient dynamic annealing. A regime with low damage increase for fluences below 1015 at/cm2 is followed by a strong increase for intermediate fluences. For the highest fluences the damage curve rises slowly until a buried amorphous layer is formed. High temperature annealing was performed in nitrogen atmospheres at low pressure (1300 °C, 105 Pa) or at ultra-high pressure (1450 °C, 109 Pa). Implantation damage was found to be extremely stable and annealing only resulted in slight structural recovery. For high fluences out-diffusion of Eu is observed during annealing. Nevertheless, photoluminescence (PL) measurements show intense Eu-related red light emission for all samples with higher PL intensity for the high temperature high pressure annealing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 268, Issue 19, 1 October 2010, Pages 2907-2910
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 268, Issue 19, 1 October 2010, Pages 2907-2910
نویسندگان
K. Lorenz, S. Magalhães, E. Alves, M. Peres, T. Monteiro, A.J. Neves, M. BoÄkowski,