کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1681576 | 1518650 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The structural and optical properties of metal ion-implanted GaN
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The structural and optical properties of metal ion-implanted GaN The structural and optical properties of metal ion-implanted GaN](/preview/png/1681576.png)
چکیده انگلیسی
The practical development of novel optoelectronic materials with appropriate optical properties is strongly connected to the structural properties of the prepared doped structures. We present GaN layers oriented along the (0Â 0Â 0Â 1) crystallographic direction that have been grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on sapphire substrates implanted with 200Â keV Co+, Fe+ and Ni+ ions. The structural properties of the ion-implanted layers have been characterised by RBS-channelling and Raman spectroscopy to obtain a comprehensive insight into the structural modification of implanted GaN layers and to study the subsequent influence of annealing on crystalline-matrix recovery. Photoluminescence was measured to control the desired optical properties. The post-implantation annealing induced the structural recovery of the modified GaN layer depending on the introduced disorder level, e.g. depending on the ion implantation fluence, which was followed by structural characterisation and by the study of the surface morphology by AFM.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 371, 15 March 2016, Pages 254-257
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 371, 15 March 2016, Pages 254-257
نویسندگان
A. Macková, P. Malinský, Z. Sofer, P. Å imek, D. Sedmidubský, M. Veselý, R. Böttger,