Diffusion behavior of cesium in silicon carbide at T > 1000 °C

Diffusion behavior of ion implanted cesium into 6H-SiC and CVD-SiC wafers is investigated by Rutherford backscattering spectrometry (RBS) combined with α-particle channeling and scanning electron microscopy (SEM). Implantations were done at room temperature, 350 and 600 °C. A strong temperature dependence of irradiation induced diffusion is observed. Transport mechanisms were studied by isochronal and isothermal annealing methods up to temperatures of 1500 °C. Cesium transport in irradiation damaged SiC is governed by an impurity trapping mechanism of defect structures and is similar in single and polycrystalline SiC.