کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1681995 | 1518710 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Molecular dynamics simulation of Ga+ ion collision process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Molecular dynamics (MD) simulations of 30Â keV accelerated Ga ions has been carried out, colliding with a Si surface. Using this procedure the amorphous structural region of the Si was found to expand with the progression of the interface region, that lie between the amorphous structure and the crystalline structure, as fluence increased in the depth direction. The height of the structure is increased and has a peak value around 1.6Â ÃÂ 1015Â ion/cm2, the height becomes the negative value beyond the peak, that is, the phenomenon changes from a deformation to a remove. The tendency of distribution for height and depth is a good agreement with an experimental data.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 307, 15 July 2013, Pages 235-239
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 307, 15 July 2013, Pages 235-239
نویسندگان
S. Satake, K. Ono, M. Shibahara, J. Taniguchi,