Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs

We have investigated the effects of 50 MeV lithium ion irradiation on the DC electrical characteristics of first-generation silicon–germanium heterojunction bipolar transistors (50 GHz SiGe HBTs) in the dose range of 600 krad to 100 Mrad. The results of 50 MeV Li3+ ion irradiation on the SiGe HBTs are compared with 63 MeV proton and Co-60 gamma irradiation results in the same dose range in order to understand the damage induced by different LET species. The radiation response of emitter–base (EB) spacer oxide and shallow trench isolation (STI) oxide to different irradiation types are discussed in this paper. We have also focused on the efficacy in the application of a Pelletron accelerator to study total dose irradiation studies in SiGe HBTs.

► Total dose effects of 50 MeV Li3+ ion on 50 GHz SiGe HBTs is investigated.
► Ion irradiated results were compared with Co-60 gamma results.
► 50 MeV Li ions create more damage in E–B spacer oxide when compared to Co-60 gamma radiation.
► Co-60 gamma radiation create more damage in STI oxide when compared to 50 MeV Li ions.
► Worst case total dose radiation effects can be studied using Pelletron accelerator facilities.