کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1682282 | 1518744 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High precision determination of the InN content of Al1âxInxN thin films by Rutherford backscattering spectrometry
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
In this work a careful manual analysis of Rutherford backscattering spectrometry spectra is discussed to determine the InN content of Al1âxInxN thin films grown on GaN buffer layers. The main source of error arises from the fact that the low signal of Al is superimposed to the high signal of Ga from the GaN buffer layer. The uncertainties in the derived InN fraction are discussed. Furthermore, it is shown that channelling effects only have a minor influence on the compositional analysis of the studied films although they can significantly reduce the count rate and distort the shape of the spectra.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 273, 15 February 2012, Pages 105-108
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 273, 15 February 2012, Pages 105-108
نویسندگان
S. Magalhães, N.P. Barradas, E. Alves, I.M. Watson, K. Lorenz,