Manganese in silicon carbide

Structural disorder and relocation of implanted Mn in semi-insulating 4H–SiC has been studied. Subsequent heat treatment of Mn implanted samples has been performed in the temperature range 1400–2000 °C. The depth distribution of manganese is recorded by secondary ion mass spectrometry. Rutherford backscattering spectrometry has been employed for characterization of crystal disorder. Ocular inspection of color changes of heat-treated samples indicates that a large portion of the damage has been annealed. However, Rutherford backscattering shows that after heat treatment, most disorder from the implantation remains. Less disorder is observed in the [0 0 0 1] channel direction compared to [112¯3] channel direction. A substantial rearrangement of manganese is observed in the implanted region. No pronounced manganese diffusion deeper into the sample is recorded.