Residual stress analysis of TiN film fabricated by plasma immersion ion implantation and deposition process

Titanium nitride (TiN) films were fabricated on AISI52100 bearing steel surface employing a hybrid plasma immersion ion implantation and deposition (PIIID) technique. The chemical composition, morphology and microstructure of TiN films were characterized by atomic force microscope (AFM), energy dispersive spectrometer (EDS), scanning electron microscope (SEM) and X-ray diffraction (XRD), respectively. The residual stress of TiN films under different deposition parameter conditions were measured by means of glazing incidence angle X-ray diffraction (GIXRD) method. The influence of film thickness and X-ray glazing incidence angle on residual stress were investigated. AFM observation reveals that the TiN films have extremely smooth surface, high uniformity and efficiency of space filling over large areas. XRD analysis results indicate that TiN phase exists in the surface modified layer and exhibits a preferred orientation with the (2 0 0) plane. The GIXRD data shows that the residual stress in as-deposited TiN films is compressive stress, and the residual stress value decreases with the film thickness and increases with the glazing incidence angle. The compressive stress reduces from 2.164 GPa to 1.163 GPa, which corresponds to the film thickness from 1.5 μm to 4.5 μm, respectively. Reasonably selecting PIIID process parameters for TiN films fabrication, the residual stress in the film can be controlled effectively.

► The residual stress in PIIID TiN film was analyzed and measured by GIXRD method.
► TiN films exhibit a preferred orientation with the (2 0 0) plane.
► The residual stress in TiN films is compressive stress.
► The minimum residual compressive stress in TiN films reaches 1.163 GPa.
► Residual stress decreases with the increase of film thickness and glazing incidence angle.