کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1682426 | 1010469 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The channeling effect of Al and N ion implantation in 4H-SiC during JFET integrated device processing
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A strong channeling effect is observed for the ions of Al and N implanted in 4H-SiC due to its crystalline structure. This effect causes difficulties in subsequent accurate estimation of the depth of junctions formed by multiple ion implantation steps. A variety of lateral JFET transistors integrated on the same 4H-SiC wafer have been fabricated. Secondary Ion Mass Spectrometry measurements and Monte-Carlo simulations were performed in order to quantify and control the channeling effect of the implanted ions. A technological process was established enabling to obtain devices working with the presence of the channeling effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 365, Part A, 15 December 2015, Pages 256-259
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 365, Part A, 15 December 2015, Pages 256-259
نویسندگان
M. Lazar, F. Laariedh, P. Cremillieu, D. Planson, J.-L. Leclercq,