Radiation damage induced in Al2O3 single crystal by 90 MeV Xe ions

Radiation damage induced in Al2O3 single crystal by 90 MeV Xe ions were investigated by optical absorption measurements, Raman spectroscopy and X-ray diffraction (XRD) techniques. The irradiations were performed at the GANIL accelerator in Caen, France for the fluence in the range from 1012 to 6 × 1013 cm−2 at room temperature under normal incidence. The F+ and F22+ centers kinetic as a function of fluence deduced from the optical measurements explains that the single defects (F and F+) aggregate to F center clusters (F2F2, F2+, F22+) during irradiation at high fluence (>1013 cm−2). Raman and XRD analysis reveal a partial disorder of 40% of Al2O3 in the studied fluence range in accordance with Kabir et al. (2008) study. The result suggests that this is due to the stress relaxation process which occurs at high fluence (>1013 cm−2).