کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1682477 | 1518734 | 2012 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Radiation emission phenomena in bent silicon crystals: Theoretical and experimental studies with 120 GeV/c positrons
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The radiation emission phenomena in bent silicon crystals have been thoroughly investigated at the CERN SPS-H4 beamline. The incoming and outgoing trajectories of charged particles impinging on a silicon strip crystal have been reconstructed by high precision silicon microstrip detectors. A spectrometer method has been exploited to measure the radiation emission spectra both in volume reflection and in channeling. The theoretical method used to evaluate the photon spectra is presented and compared with the experimental results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 283, 15 July 2012, Pages 84–92
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 283, 15 July 2012, Pages 84–92
نویسندگان
D. Lietti, E. Bagli, S. Baricordi, A. Berra, D. Bolognini, P.N. Chirkov, P. Dalpiaz, G. Della Mea, D. De Salvador, S. Hasan, V. Guidi, V.A. Maisheev, A. Mazzolari, M. Prest, E. Vallazza, D. Vincenzi, I.A. Yazynin,