Defect induced ferromagnetism in 4H-SiC single crystals

We have demonstrated the feasibility of using ion irradiation to induce ferromagnetism in 4H-SiC. Upon Ne+ ion irradiation to a fluence of 5 × 1014/cm2, ferromagnetism is observed up to room temperature, while the virgin sample only shows diamagnetism. Sample characterization by using both Rutherford Backscattering/Channeling spectrometry and Raman spectroscopy shows defect generation and the partial loss of crystalline structures by ion irradiation. With further increased fluences to reach complete amorphization in SiC, the magnetic moments are still observed. The defect-induced ferromagnetism is stable upon thermal annealing at 1400 °C.