کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1682892 1010485 2008 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization and dielectric properties of GeOx thin films prepared by radio frequency (RF) reactive sputtering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Characterization and dielectric properties of GeOx thin films prepared by radio frequency (RF) reactive sputtering
چکیده انگلیسی

Dielectric properties of germanium oxide have not been investigated in detail. But, it has been investigated from an optical viewpoint as light waveguide materials. Its electrical properties have rarely been studied for electronic device applications.We have examined the previous investigations on Ge–O films deposited by radio frequency (RF) reactive sputtering. The dissipation factor tan δ, the capacitance per area, the breakdown field of GeOx films were studied as well as its composition by RBS analysis. Aiming at obtaining the higher value of the dielectric constant or capacitance per area, we have attempted to fabricate Ge–Pb–O films by the same deposition method. An optimization of the dielectric properties of these materials has been done, using the best conditions of sputtering for each oxide, the alternated pile layers as dielectric multilayer capacitors and thermal treatments.These dielectric properties have been improved by thermal treatments, and the dielectric multilayer made with alternated GeO2 and Ge–Pb–O films capacitors has a breakdown field superior to that of each simple layer.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 21, November 2008, Pages 4829–4836
نویسندگان
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