کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1682903 1518678 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Crystalline nanostructures on Ge surfaces induced by ion irradiation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Crystalline nanostructures on Ge surfaces induced by ion irradiation
چکیده انگلیسی

Besides conventional low efficiency lithographic techniques broad ion beam irradiation is a simple and potentially mass productive technique to fabricate nanoscale patterns on various semiconductor surfaces. The main drawback of this method is that the irradiated semiconductor surfaces are amorphized, which strongly limits the potential application of these nanostructures in electronic and optoelectronic devices. In this work we report that high-quality crystalline nanostructure patterns are formed on Ge surfaces via Ar+ irradiation at elevated temperatures. This pattern formation process resembles the pattern formation in homoepitaxy. Therefore, the process is discussed based on a “reverse epitaxy” mechanism.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 341, 15 December 2014, Pages 13–16
نویسندگان
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