کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1682903 | 1518678 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystalline nanostructures on Ge surfaces induced by ion irradiation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Besides conventional low efficiency lithographic techniques broad ion beam irradiation is a simple and potentially mass productive technique to fabricate nanoscale patterns on various semiconductor surfaces. The main drawback of this method is that the irradiated semiconductor surfaces are amorphized, which strongly limits the potential application of these nanostructures in electronic and optoelectronic devices. In this work we report that high-quality crystalline nanostructure patterns are formed on Ge surfaces via Ar+ irradiation at elevated temperatures. This pattern formation process resembles the pattern formation in homoepitaxy. Therefore, the process is discussed based on a “reverse epitaxy” mechanism.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 341, 15 December 2014, Pages 13–16
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 341, 15 December 2014, Pages 13–16
نویسندگان
Xin Ou, Stefan Facsko,