کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1683020 | 1010488 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature effect study of silicon-on-insulator structures prepared by high dose implantation of nitrogen
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The temperature effect on the microstructure of the N+-ion implantation-induced Si3N4 buried layer was investigated. The underlying silicon nitride layers were formed in a Si (1 1 1) wafer after implantation of 50 keV nitrogen ions (fluence: 1 Ã 1017, 2 Ã 1017 and 5 Ã 1017 ions/cm2). It was observed that a continuous amorphous layer of about 200 nm thickness was formed in all implanted samples due to the irradiation damage. After 30 min annealing at 900 °C, poly-crystalline Si3N4 products were found by TEM examination in the specimen implanted with 5 Ã 1017 ions/cm2 dose. In the case of annealing at 1200 °C a continuous single-crystalline α-Si3N4 buried layer was formed indicating that the amorphous layer in the implanted samples could be transformed into three successive layers, which are amorphous SiO2, single-crystal α-Si3N4 and retained defects from surface to inner substrate, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 269, Issue 24, 15 December 2011, Pages 3212-3216
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 269, Issue 24, 15 December 2011, Pages 3212-3216
نویسندگان
Rong Tan Huang, J.Y. Hsu, J.W. Huang, Y.C. Yu,