کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1683748 | 1518751 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Submicron beam X-ray diffraction of nanoheteroepitaxily grown GaN: Experimental challenges and calibration procedures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Highly relaxed GaN nanodots and submicron ridges have been selectively grown in the NSAG regime using MOVPE on lattice mismatched 6H–SiC and AlN substrates. 2D real space and 3D reciprocal space mapping was performed with a CCD detector using 10.4 keV synchrotron X-ray radiation at the 2-ID-D micro-diffraction beamline at Advanced Photon Source (APS). Calibration procedures have been developed to overcome the unique challenges of analyzing NSAG structures grown on highly mismatched substrates. We studied crystallographic planar bending on the submicron scale and found its correlation with strain relaxation in the NSAG ridges.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 268, Issues 3–4, February 2010, Pages 320–324
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 268, Issues 3–4, February 2010, Pages 320–324
نویسندگان
P.L. Bonanno, S. Gautier, A.A. Sirenko, A. Kazimirov, Z.-H. Cai, W.H. Goh, J. Martin, A. Martinez, T. Moudakir, N. Maloufi, M.B. Assouar, A. Ramdane, L. Le Gratiet, A. Ougazzaden,