کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1684276 | 1518749 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
On artefacts in the secondary ion mass spectrometry profiling of high fluence H+ implants in GaAs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
High fluence (>1017Â H/cm2) ion implantation of H in GaAs is suitable for the ion cut process, and produces H bubbles under the surface which may cause blistering. By comparing the destructive depth profiling of these implants by secondary ion mass spectrometry (SIMS) with non-destructive profiling by elastic recoil detection analysis (ERD), we demonstrate that SIMS underestimates total H content by up to a factor of 2 due to undetected H escaping from bubbles during analysis. We also show that the depth of the maximum H concentration from SIMS can be in error by 20% due to large variations in the sputter rate through the profile.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 268, Issues 11â12, June 2010, Pages 2051-2055
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 268, Issues 11â12, June 2010, Pages 2051-2055
نویسندگان
M.J. Bailey, C. Jeynes, B.J. Sealy, R.P. Webb, R.M. Gwilliam,