Analysis of the accuracy of several methods for determining the concentration of 11B+ implanted silicon

The concentration of 11B+ in silicon has been determined by a number of different analytical techniques. Several commercial vendors provided silicon wafers implanted with 11B+ ions over a wide range of fluence (4 × 1013– 3 × 1016 11B/cm2) and energy (300 eV–10 keV) for evaluation. The techniques used in this evaluation included the following: Elastic recoil detection (ERD) using 12 MeV F4+ ions, nuclear reaction analysis (NRA) using the 11B(p,α)8Be* reaction and secondary ion mass spectroscopy (SIMS). The accuracy and potential drawbacks of each of these techniques is discussed.