کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1684772 1518760 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ion implantation of Cs into silicon carbide: Damage production and diffusion behaviour
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Ion implantation of Cs into silicon carbide: Damage production and diffusion behaviour
چکیده انگلیسی
Silicon carbide (SiC) is a potential cladding material for advanced nuclear fuels. In operating conditions, SiC will be submitted to energetic particles which may alter its retention capability for the fission products. The aim of the present work is to examine the effects induced by the implantation of a typical fission product (Cs) into SiC and to study its diffusion behaviour during thermal treatments. The results indicate that implantation at room temperature induces a total disorder (amorphization) at about 0.25 dpa. Subsequent thermal treatments reveal that defect annealing initiates at ∼600 °C and that SiC begins to recover a crystalline structure at ∼1300 °C. Besides, the implanted Cs atoms start to diffuse within the temperature range 1150-1300 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 257, Issues 1–2, April 2007, Pages 227-230
نویسندگان
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