کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1684799 | 1518760 | 2007 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Amorphous phase formation in ion implanted InxGa1−xAs Amorphous phase formation in ion implanted InxGa1−xAs](/preview/png/1684799.png)
The amorphisation kinetics of InxGa1−xAs alloys were investigated using Rutherford backscattering spectrometry in channelling configuration. Using metal organic chemical vapour deposition, epitaxial InxGa1−xAs layers were grown on either GaAs, InP or InAs over a wide range of stoichiometries. Ion implantation was then performed using 60 keV Ge ions at room temperature. In contrast with AlxGa1−xAs alloys, InxGa1−xAs does not exhibit amorphisation kinetics intermediate between the two binary extremes. The amorphisation behaviour was fit using the Hecking model yielding a determination of the relative probabilities of direct impact amorphisation (Pa) and stimulated amorphisation (As). For InxGa1−xAs, Pa is effectively independent of the stoichiometry whilst As exhibits a quadratic dependence on x with a maximum at x ≈ 0.31 (where the critical ion fluence for amorphisation is at a minimum). We attribute the rapid InxGa1−xAs amorphisation to the local strain induced by a bimodal bond length distribution, the latter demonstrated by previous EXAFS studies.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 257, Issues 1–2, April 2007, Pages 344–347