کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1685147 1010548 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Angular dependence of electronic sputtering from HOPG
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Angular dependence of electronic sputtering from HOPG
چکیده انگلیسی

We have studied the angular distribution of 120 MeV Au ion beam induced sputtering yield for three cases: from crystalline highly oriented pyrolytic graphite (HOPG) for (A) normal and (B) 70° incidence and from (C) amorphous carbon sample for normal incidence. An anisotropic distribution of sputtering is observed for HOPG samples studied with a distribution Y = Acosnθ + Bexp[−(θ − μ)2σ2]. Though the over-cosine function dependence is observed for all the cases, the anomalous peak observed at 53° for normal incidence for HOPG sample is found to shift to 73° when the sample is tilted by 20°. No peak is observed in the amorphous carbon sample which further confirms that the anisotropy observed is due to the crystal structure and formation of a pressure pulse. The high exponent of over-cosine distribution of sputtering yield (n = 3.2–3.8) signifies formation of intense pressure pulse induced jet like sputtering.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 8, April 2008, Pages 1265–1268
نویسندگان
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