کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1685152 | 1010548 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Search for short-time phase effects in the electronic damage evolution - A case study with silicon
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کلمات کلیدی
79.20.Rf72.15.Lh72.20.Jv31.70.Hq32.80.Hd79.20.FvPhase effectsAuger decay - افتادگی آهAuger electrons - الکترون های گردابElectron temperature - دمای الکترونیAmorphous silicon - سیلیکون آمورفCrystalline silicon - سیلیکون بلورینElectron spectra - طیف الکترونیShort-time dynamics - پویایی کوتاه مدتIon tracks - یون آهنگ
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This work focusses on the production and decay properties of inner-shell vacancies and valence-band excitations induced by swift highly charged ions interacting with amorphous and crystalline Si. High resolution electron spectra have been taken for fast heavy ions at 1.78-5Â MeV/u as well as for electrons of similar velocity incident on atomically clean Si targets of well defined phase. Various Auger-electron structures are analyzed concerning their width, their intensity and exact peak position. All measured peaks show a small shift towards lower energy when the charge of the projectile is increased. This finding is an indication for a nuclear-track potential inside the ion track. A detailed analysis of the Auger-electron spectra for amorphous Si and crystalline Si(1Â 1Â 1) 7Â ÃÂ 7 points to a small but significant phase effect in the short-time dynamics of ion tracks.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 8, April 2008, Pages 1287-1293
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 8, April 2008, Pages 1287-1293
نویسندگان
G. Schiwietz, K. Czerski, R. Hellhammer, M. Roth, F. Staufenbiel, R.C. Fadanelli, P.L. Grande,