Visible light emission from silicon dioxide with implanted excess silicon

Light emission from silicon dioxide doped with excess silicon by silicon ion implantation was investigated. Photoluminescence of silicon dioxide after silicon ion implantation and subsequent annealing at temperatures exceeding 1000 °C was observed. Excitation with monochromatic light with wavelength ranging from λ = 488 nm to λ = 266 nm leads to wide wavelength band emission ranging from about 650 nm up to about 850 nm with a maximum located at about 750 nm. This red/infrared photoemission is attributed to silicon nanocrystals created in silicon dioxide matrix. However, the same material used in electroluminescent experiments emitted blue and green light as well. In this paper the results of photo- and ionoluminescence experiments will be presented. The interest of the paper is focused on the problem of identification of different regions in the structure responsible for light emission of different wavelengths.